TITLE

Compound formation at the interface between cobalt thin films and single-crystal GaAs

AUTHOR(S)
Genut, M.; Eizenberg, M.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1358
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interfacial reactions between cobalt thin films and single-crystal GaAs substrates have been studied by means of Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction. The interaction starts at ∼325 °C by the formation of a ternary phase, most probably Co2GaAs, which grows highly oriented with respect to the (001) substrate, with a lattice mismatch of ∼-10%. The reaction kinetics has been studied and found to be diffusion controlled with an activation energy of 0.7±0.1 eV. Cobalt was determined as the dominant diffusion species. The oriented ternary phase co-exists with randomly oriented CoGa and CoAs at the temperature range of 325–500 °C, while at higher temperatures only the binary compounds prevail.
ACCESSION #
9822934

 

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