TITLE

Spectroscopic evidence that oxygen suppresses Si incorporation into vapor phase epitaxial InP

AUTHOR(S)
Iwata, Naotaka; Inoshita, Takeshi
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1361
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photothermal ionization spectroscopy is employed to monitor the residual donor impurities in InP grown by vapor phase epitaxy, and study the effect of adding O2 to the carrier gas. The dominant donor species are found to be Si and S, irrespective of the O2 addition, and their concentrations are obtained with the aid of Hall measurements. The result shows that the O2 addition reduces the incorporation of Si into InP but does not affect the incorporation of S.
ACCESSION #
9822932

 

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