TITLE

Amorphous silicon, germanium, and silicon-germanium alloy thin-film transistor performance and evaluation

AUTHOR(S)
Yan, Philip; Lichtin, Norman N.; Morel, Don L.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1367
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first hydrogenated amorphous germanium and hydrogenated amorphous silicon-germanium alloy field-effect transistors with appreciable field-effect response in n- and p-channel modes were developed by reducing the dihydride content in the films. Field-effect mobilities were derived from transistor characteristics. Hole mobilities are superior to those in pure hydrogenated amorphous silicon which offers the opportunity for improved thin-film devices.
ACCESSION #
9822929

 

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