Near-ideal Schottky barrier formation at metal-GaP interfaces

Brillson, L. J.; Viturro, R. E.; Slade, M. L.; Chiaradia, P.; Kilday, D.; Kelly, M. K.; Margaritondo, G.
May 1987
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1379
Academic Journal
Soft x-ray photoemission measurements of ultrahigh-vacuum-cleaved GaP (110) surfaces with In, Al, Ge, Cu, and Au overlayers reveal Fermi level stabilization over a wide energy range and a near-ideal correlation between Schottky barrier height and metal work function. Coupled with recent findings for InAs (110) and InxGa1-xAs (100) (x>0) surfaces, these results demonstrate that Fermi level pinning in a narrow energy range is not representative of metal/III-V compound semiconductor interfaces.


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