TITLE

Near-ideal Schottky barrier formation at metal-GaP interfaces

AUTHOR(S)
Brillson, L. J.; Viturro, R. E.; Slade, M. L.; Chiaradia, P.; Kilday, D.; Kelly, M. K.; Margaritondo, G.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1379
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Soft x-ray photoemission measurements of ultrahigh-vacuum-cleaved GaP (110) surfaces with In, Al, Ge, Cu, and Au overlayers reveal Fermi level stabilization over a wide energy range and a near-ideal correlation between Schottky barrier height and metal work function. Coupled with recent findings for InAs (110) and InxGa1-xAs (100) (x>0) surfaces, these results demonstrate that Fermi level pinning in a narrow energy range is not representative of metal/III-V compound semiconductor interfaces.
ACCESSION #
9822919

 

Related Articles

  • Asymmetric tilt interface induced by 60 degrees misfit dislocation arrays in GaSb/GaAs(001). Kang, J.M.; Suk-Ki Min // Applied Physics Letters;12/5/1994, Vol. 65 Issue 23, p2954 

    Investigates the asymmetric tilt interface induced by 60 degrees misfit dislocation arrays in gallium antimonide/gallium arsenide(001). Result of calculations using anisotropic elasticity; Preference for a particular orientation assisting the bending of atomic planes to the free surface;...

  • An ordered Ga2Te3 phase in the ZnTe/GaSb interface. Chou, C. T.; Hutchison, J. L.; Cherns, D.; Casanove, M.-J.; Steeds, J. W.; Vincent, R.; Lunn, B.; Ashenford, D. A. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6566 

    Presents a study which examined ordered Ga[sub2]Te[sub3] phase in the zinc telluride/gallium antimonide interface. Details of experimental techniques used; Description of a structural model proposed for the ordered phase; Derivation of the lattice parameters of the unit cell from electron...

  • Origins of interfacial disorder in GaSb/InAs superlattices. Thibado, P.M.; Bennett, B.R. // Applied Physics Letters;12/11/1995, Vol. 67 Issue 24, p3578 

    Examines the interface surfaces of short-period gallium antimony (GaSb) /indium arsenide (InAs) superlattices in situ with scanning tunneling microscopy. Use of migration enhanced epitaxy at the interfaces; Comparison between interfaces on GaSb with those on strained InAs; Primary source of...

  • Negative capacitance in GaN/AlGaN heterojunction dual-band detectors. Byrum, L. E.; Ariyawansa, G.; Jayasinghe, R. C.; Dietz, N.; Perera, A. G. U.; Matsik, S. G.; Ferguson, I. T.; Bezinger, A.; Liu, H. C. // Journal of Applied Physics;Sep2009, Vol. 106 Issue 5, p053701-1 

    A study of trap states in n+-GaN/AlGaN heterostructures using electrical, thermal, and optical analyses is reported. Capacitance-voltage-frequency measurements showed negative capacitance and dispersion, indicating interface trap states. Infrared spectra identified three impurity related...

  • Understanding nonpolar GaN growth through kinetic Wulff plots. Sun, Qian; Yerino, Christopher D.; Ko, Tsung Shine; Cho, Yong Suk; Lee, In-Hwan; Han, Jung; Coltrin, Michael E. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093523 

    In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using the concept of kinetic Wulff plots (or v-plots). Quantitative mapping of kinetic Wulff plots in polar, semipolar, and nonpolar angles are achieved using a differential...

  • Study of GaInP solar-cell interfaces by variable-flux spectral measurements. Morozov, I.; Gudovskikh, A. // Semiconductors;Apr2014, Vol. 48 Issue 4, p459 

    The band structure and interface properties of solar cells based on GaInP/AlInP heterostructures are studied. The effect of band-structure variation at the interface between the p-AlInP wide-gap window and the p-GaInP emitter under the action of incident light is demonstrated. This effect...

  • Photoelectric properties of porous GaN/SiC heterostructures. Mynbaeva, M.; Sitnikova, A.; Mynbaev, K. // Semiconductors;Oct2011, Vol. 45 Issue 10, p1317 

    The origin of photoconductivity in porous structures formed by anodization of GaN/SiC heterostructures has been studied. It is shown by comparing the photoelectric, optical, electrical, and structural properties of untreated and anodized heterostructures that this effect is due to the presence...

  • X-ray analysis of lattice imperfections and distortions in a Si/GaP bilayer. Ishizuka, F.; Itoh, T. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3007 

    Investigates the lattice imperfections and the distortions at the interface of a silicon/gallium phosphide bilayer formed by molecular beam epitaxy using x-ray diffraction techniques. Origins of the imperfections; Analysis of the lattice distortions in the bilayer; Cause of the strain in the...

  • Reactivity of GaO Clusters on Zeolite ZSM-5 for the Conversion of Methanol to Aromatics. Lopez-Sanchez, Jose; Conte, Marco; Landon, Phil; Zhou, Wu; Bartley, Jonathan; Taylor, Stuart; Carley, Albert; Kiely, Christopher; Khalid, Karim; Hutchings, Graham // Catalysis Letters;Sep2012, Vol. 142 Issue 9, p1049 

    Composites of GaO clusters and zeolite ZSM-5 were evaluated for the transformation of methanol to hydrocarbons. Comparison of the activity with ZSM-5 showed that the GaO clusters are responsible for the enhanced selectivity to aromatics via contact synergy, thus showing the importance of non...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics