Activation mechanism of zinc implants in GaAs

Bensalem, Rachid; Sealy, Brian
May 1987
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1382
Academic Journal
Rapid thermal annealing has been used to study the activation mechanism of zinc ions implanted into GaAs. The data divide into two parts, a time-dependent and a time-independent regime. Analysis of these regimes suggests that inactive zinc becomes electrically active by local diffusion to an unoccupied gallium vacancy, the energy for this process being 1.1 eV. The time-independent regime produces another energy of 0.37 eV which is suggested to be the energy required to place a zinc atom onto a gallium vacancy.


Related Articles

  • Recombination model of the diffusion of zinc in GaAs. Grigor’ev, N. N.; Kudykina, T. A. // Semiconductors;Jun97, Vol. 31 Issue 6, p595 

    The isothermal diffusion of Zn in GaAs is described within the Longini reaction and a proposed recombination model: during diffusion a highly mobile zinc interstitial recombines with a gallium vacancy and becomes a relatively immobile site defect. The concentration profile of the total zinc...

  • Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers. Hong, Soon-Ku; Kurtz, Elisabeth; Chang, Ji-Ho; Hanada, Takashi; Oku, Masaoki; Yao, Takafumi // Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p165 

    We report a remarkably low stacking-fault density in ZnSe epilayers directly grown on commercial epi-ready GaAs (001) substrates without GaAs buffer layer growth. It is found that proper pregrowth treatments on epi-ready GaAs (001) substrates to obtain clean surfaces are crucial for...

  • Local structure around Zn atoms diffused into the GaAs crystal. Kitano, T.; Matsumoto, Y.; Matsui, J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1390 

    We have studied the local structure around Zn atoms diffused into the GaAs crystal using the extended x-ray absorption fine structure method. Although Zn atoms are associated with vacancies at the first nearest neighbor (NN) sites, the first NN distance remains constant even where vacancies...

  • Lasing in a ZnS0.12Se0.88/ZnSe multilayer structure with photopumping. Suemune, I.; Yamada, K.; Masato, H.; Kan, Y.; Yamanishi, M. // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p981 

    Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have...

  • Selective self-optical compensation effect for a newly discovered acceptor-associated emission in Zn+ ion-implanted GaAs. Ohnishi, Nobukazu; Makita, Yunosuke; Irie, Katsuhiro; Kudo, Kazuhiro; Nomura, Toshio; Tanaka, Hideki; Mori, Masahiko; Mitsuhashi, Yoshinobu // Journal of Applied Physics;10/1/1986, Vol. 60 Issue 7, p2502 

    Presents a study which performed photoluminescencce measurements for zinc[sup+] ion-implanted gallium arsenide (GaAs). Materials and methods used; Description of the PL spectra of zinc[sup+] ion-implanted GaAs for zinc; Conditions necessary for the creation of g-g emission.

  • Sealed-ampoule diffusion of zinc into Ga1-xAlxAs at 650 °C. Quintana, V.; Clemencon, J. J.; Chin, A. K. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2454 

    Presents a study which examined the diffusivity of the zinc into Ga[sub 1] [sub x]Al[sub x]As using sealed-ampoule diffusion. Information on the activation energy for gallium arsenide; Details of the anomalous dependence of the zinc diffusivity on aluminum friction in Ga [sub 1] [sub x]Al[sub x]As.

  • Formation of void/Ga-precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces. Jäger, W.; Rucki, A.; Urban, K.; Hettwer, H.-G.; Stolwijk, N. A.; Mehrer, H.; Tan, T. Y. // Journal of Applied Physics;10/1/1993, Vol. 74 Issue 7, p4409 

    Reports on the formation of void/gallium-precipitate pairs during zinc diffusion into gallium arsenide. Zinc diffusion mechanism; Mechanism of void/gallium-precipitate formation; Effects on void/gallium-precipitate formation.

  • Enhanced Zn diffusion in GaAs pnpn structures: Growth versus annealing. Chen, C.Y.; Cohen, R.M. // Applied Physics Letters;9/4/1995, Vol. 67 Issue 10, p1402 

    Details the measurement of zinc diffusivity in heavily doped pnpn gallium arsenide structures after growth and annealing. Injection of a large flux of gallium interstitials from the surface; Entrapment in the buried p-type layer by the electric field of the pn junctions; Role in the enhancement...

  • Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy. Ahsan, S.; Khan, A. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2178 

    Investigates the initial stages of zinc selenide deposition on the gallium arsenide (GaAs)(001)-(2x2) surface. Induction of atomic disorder from selenium-arsenic exchange reaction; Effect of zinc deposition on surface periodicity; Role of zinc for the interaction of selenium with the GaAs surface.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics