TITLE

Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic

AUTHOR(S)
Vook, D. W.; Reynolds, S.; Gibbons, J. F.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1386
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have developed a novel thermal precracking technique which has improved the electrical quality of GaAs grown using trimethylarsenic, while maintaining excellent surface morphology. Background doping is reduced by a factor of 5, and carbon incorporation is reduced by a factor of 10 or more. This method may prove useful for reducing carbon incorporation from other organometallic arsenic sources as well. Net background doping below 1016 cm-3 and room-temperature electron mobilities of 4000–4500 cm2/V s have been obtained. These are the best values reported for GaAs grown using trimethylarsenic.
ACCESSION #
9822914

 

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