TITLE

Effect of thermal pretreatment on electron irradiation induced defects in hydrogen-grown silicon

AUTHOR(S)
Wu, Jin; Qin, Guo-Gang
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1355
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Wafers of float zone Si grown in hydrogen (Si[H]) were annealed at various temperatures in the range of 300–750 °C before irradiation with 5 MeV electrons. It was found that hydrogen-related deep levels were no longer observed, when the preannealing temperature was above 500 °C (450 °C) in the case of irradiated n-type Si[H] (p-type Si[H]) samples. Similarly, the convergence of annealing temperatures of different irradiation defects towards a common temperature normally observed in Si[H] was no longer observed, if the Si[H] sample had been annealed at or above 550 °C. A dynamic model is proposed to explain the experimental results.
ACCESSION #
9822899

 

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