Magnetotransport and luminescence measurements in an n-type selectively doped InGaAs/GaAs strained quantum well structure

Fritz, I. J.; Schirber, J. E.; Jones, E. D.; Drummond, T. J.; Dawson, L. R.
May 1987
Applied Physics Letters;5/11/1987, Vol. 50 Issue 19, p1370
Academic Journal
A selectively doped, n-type, single strained quantum well (SSQW) structure, consisting of an 8-nm-thick In0.25Ga0.75As layer sandwiched between thick GaAs layers, has been grown by molecular beam epitaxy. Low-field Hall-effect measurements from 4 to 300 K and field-dependent magnetotransport measurements at 4 K show that conduction through the doped GaAs layers competes with conduction from the two-dimensional electron gas confined by the InGaAs quantum well. Photoluminescence measurements at 4 K yield a band-gap energy of 1.30 eV and confirm the transport measurement of carrier density in the InGaAs conducting channel. Analysis of the parallel-conduction process yields channel carrier density and mobility which are consistent with data on strained-layer superlattices (SLS’s) not exhibiting parallel conduction. Comparison of the SSQW and SLS results demonstrates that heavily doped SSQW structures require narrow doping spikes to avoid parasitic current paths.


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