Electrical effects of surface and deep states induced in n-type silicon by rapid thermal processing

Adekoya, Wale-Oluseyi; Muller, Jean-Claude; Siffert, Paul
May 1987
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1240
Academic Journal
Induced defects in Czochralski-grown n-type <111> 1–5 Ω cm silicon wafers due to high-temperature (800 °C/10 s; cooling rate[bar_over_tilde:_approx._equal_to]100 °C/s) rapid thermal annealing (RTA) have been studied using deep level transient spectroscopy. The samples processed at 1000 °C and above showed a defect continuum containing at least an electron trap at E(0.58 eV) with a concentration [bar_over_tilde:_approx._equal_to]1015 cm-3. The electrical activity of the defects substantially degraded the current/voltage and capacitance/voltage characteristics of the Schottky diodes made from the processed samples with a barrier height reduction from 0.85 V at 800 °C/900 °C to 0.32 V at 1100 °C. However, a further RTA treatment at 650 °C for 60 s resulted in a complete restoration of these characteristics and no trap was recorded in the deep level transient spectroscopy spectrum. This degradation, which was not observed in oxide-encapsulated samples processed in the same temperature range, is considered to be due to impurity contamination during RTA processing which is enhanced at high temperatures ([bar_over_tilde:_approx._equal_to]1000 °C) leading to a high density of surface states.


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