Measurement of hole velocity in n-type InGaAs

Hill, P.; Schlafer, J.; Powazinik, W.; Urban, M.; Eichen, E.; Olshansky, R.
May 1987
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1260
Academic Journal
Hole drift velocities in n-type In0.53Ga0.47As have been determined experimentally for the first time. Measured values of the frequency response of transit-time-limited InGaAs p-i-n photodiodes were fit with the theoretical response using hole velocity as the only free parameter. Measurements over field strengths from 54 to 108 kV/cm showed the drift velocity to be relatively constant at (4.8±0.2) 106 cm/s, indicating that velocity saturation has occurred at field levels below 54 kV/cm.


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