Interdiffusion behavior of HgTe-CdTe junctions

Tang, Mei-Fan S.; Stevenson, David A.
May 1987
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1272
Academic Journal
Interdiffusion coefficients (D) were measured from 600 to 300 °C for HgTe-CdTe diffusion couples. The influence of the binary composition, temperature, and Hg overpressure on D has been established. Significant differences have been found in the behavior of D in two temperature regions. A dual mechanism is proposed for diffusion at higher temperatures (T≥450 °C), with a vacancy mechanism and an interstitial mechanism dominating at low and high x value regions, respectively, and an interstitial mechanism predominating at lower temperatures. The proposed model is confirmed by electrical property, tracer diffusion, and theoretical studies, and provides a basis for predicting the interdiffusion behavior at even lower temperatures.


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