TITLE

Improved electron mobility by AlAs spacer in one-sided selectively doped AlxGa1-xAs/GaAs multiple quantum well heterostructures

AUTHOR(S)
Ploog, K.; Fronius, H.; Fischer, A.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1237
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
One-sided selectively Si-doped n-AlxGa1-xAs/GaAs multiple quantum well heterostructures were grown by molecular beam epitaxy, which exhibit an enhanced mobility of more than 6×105 cm2/V s at 4 K using a binary AlAs spacer as narrow as 4.5 nm. In this heterostructure the two-dimensional electron gas is formed at the all-binary GaAs/AlAs interface of the constituent asymmetric GaAs quantum wells. The periodic sequence of electrically not coupled electron channels of high mobility with a spacing of about 133 nm is attractive for fundamental investigations; e.g., coupled-layer plasmon modes have been studied which give important information on the carrier density profile.
ACCESSION #
9822827

 

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