TITLE

Monte Carlo algorithm for hot phonons in polar semiconductors

AUTHOR(S)
Lugli, P.; Jacoboni, C.; Reggiani, L.; Kocevar, P.
PUB. DATE
May 1987
SOURCE
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1251
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a novel ensemble Monte Carlo procedure for the study of electron and phonon dynamics during the relaxation of photoexcited hot carriers. For the first time hot-electron and hot-phonon effects are included together in the same Monte Carlo simulation. The algorithm is applied to a simplified model of GaAs, consisting of one-type carriers (electrons) in a two-valley system (L and Γ valleys). The buildup of the phonon population on a picosecond scale is monitored, in parallel with the cooling of the electron distribution. As expected, the presence of nonequilibrium phonons is found to slow down the electron relaxation.
ACCESSION #
9822825

 

Related Articles

  • Role of hot electron transport in scintillators: A theoretical study. Huang, Huihui; Li, Qi; Lu, Xinfu; Qian, Yiyang; Wu, Yuntao; Williams, R. T. // Physica Status Solidi - Rapid Research Letters;Oct2016, Vol. 10 Issue 10, p762 

    Despite recent intensive study on scintillators, several fundamental questions on scintillator properties are still unknown. In this work, we use ab-initio calculations to determine the energy dependent group velocity of the hot electrons from the electronic structures of several typical...

  • A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors. Qing Hao; Hongbo Zhao; Yue Xiao // Journal of Applied Physics;2017, Vol. 121 Issue 20, p1 

    In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For...

  • Microwave Noise In Biased AlGaN/GaN And AlGaN/AlN/GaN Channels. Matulionis, A.; Liberis, J.; Ramonas, M. // AIP Conference Proceedings;2005, Vol. 780 Issue 1, p105 

    Noise temperature is measured at 10 GHz at room temperature for biased AlGaN/GaN and AlGaN/AlN/GaN two-dimensional channels. Interpretation of the experimental results, through Monte Carlo simulation, takes into account interaction of hot electrons with phonons. The calculated longitudinal noise...

  • MONTE CARLO SIMULATIONS OF ELECTRON TRANSPORT IN WURTZITE PHASE GaN MESFET INCLUDING TRAPPING EFFECT. Arabashi, H. // Modern Physics Letters B;5/30/2006, Vol. 20 Issue 13, p787 

    Trapping of hot electron behavior by trap centers located in the buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The simulated results show that trap centers are responsible for current collapse in GaN MESFET at low temperatures. These...

  • Hot-electron transport in In0.53Ga0.47As. Long, A. P.; Beton, P. H.; Kelly, M. J. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1842 

    Focuses on a study which examined the use of a Monte Carlo routine to stimulate hot-electron transport across narrow regions of heavily doped In[sub0.53]Ga[sub0.47]As. Characteristics of the performance of hot-electron transistors; Status of the InGaAs hot-electron transistor under comparable...

  • Self-consistent Monte Carlo study of high-field carrier transport in graded heterostructures. Al-Omar, A.; Krusius, J. P. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3825 

    Presents a study which investigated hot-electron transport over graded Al[subx]Ga[sub1-x]As heterostructures using the self-consistent ensemble Monte Carlo method. Function of heterostructure launchers; Improvements that resulted from the advances in submicron lithography and heteroepitaxy;...

  • A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model. Kunikiyo, T.; Takenaka, M.; Kamakura, Y.; Yamaji, M.; Mizuno, H.; Morifuji, M.; Taniguchi, K.; Hamaguchi, C. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p297 

    The physics of electron transport in bulk silicon is investigated by using a newly developed Monte Carlo simulator which improves the state-of-the-art treatment of hot carrier transport. (1) The full band structure of the semiconductor was computed by using an empirical-pseudopotential method....

  • Vacuum emission of hot electrons from silicon dioxide at low temperatures. DiMaria, D. J.; Fischetti, M. V. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4683 

    Presents a study that analyzed the vacuum emission of hot electrons from silicon dioxide films. Methodology; Analysis of the steady state transport of the hot electrons; Examination of the ballistic and near-ballistic transport of the hot electrons; Discussion on the temperature-dependent Monte...

  • Physics and design of hot-electron spectrometers and transistors. Beton, P. H.; Long, A. P.; Kelly, M. J. // Journal of Applied Physics;4/15/1989, Vol. 65 Issue 8, p3076 

    Presents a study that explained the use of Monte-Carlo simulations to calculate the transfer characteristics of gallium arsenide hot-electron transistors. Background on hot-electron spectroscopy; Analysis of the Monte-Carlo simulation of hot-electron spectra; Discussion on the energy resolution...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics