Monte Carlo algorithm for hot phonons in polar semiconductors

Lugli, P.; Jacoboni, C.; Reggiani, L.; Kocevar, P.
May 1987
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1251
Academic Journal
We present a novel ensemble Monte Carlo procedure for the study of electron and phonon dynamics during the relaxation of photoexcited hot carriers. For the first time hot-electron and hot-phonon effects are included together in the same Monte Carlo simulation. The algorithm is applied to a simplified model of GaAs, consisting of one-type carriers (electrons) in a two-valley system (L and Γ valleys). The buildup of the phonon population on a picosecond scale is monitored, in parallel with the cooling of the electron distribution. As expected, the presence of nonequilibrium phonons is found to slow down the electron relaxation.


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