Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes

Weil, T.; Vinter, B.
May 1987
Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1281
Academic Journal
Resonant tunneling is known to lead to negative differential resistance in double-barrier diodes. Sequential tunneling has been proposed by S. Luryi [Appl. Phys. Lett. 47, 490 (1985)] as an alternative mechanism for the negative differential resistance observed. We show that the two interpretations lead to the same predictions for the dc current.


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