TITLE

Electrical measurement of the formation of the platinum-rich metal silicides by metal-silicon reaction

AUTHOR(S)
Gas, P.; Tardy, J.; LeGoues, F.; d’Heurle, F. M.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1135
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In situ measurements of resistance have been used to study the interaction of Pt with a limited amount of Si deposited in adjacent layers on oxidized Si wafers. One observes in sequence the formation of Pt2Si, Pt12Si5, and Pt3Si, as seen previously by others using time-sequence annealing. The present method has the advantage of being quite rapid and simple. Changing the heating rate provides one with a measure of the activation energies for several reactions, including, for the first time, values of the apparent activation energy for phases whose formation is dominated by nucleation and growth, rather than by diffusion. A phase transformation was observed during the cooling of Pt3Si. The final Pt3Si phase examined by transmission electron microscopy reveals an interesting Widmanstätten structure. The resistivities of the different phases have been measured: 29, 32, and 53±10 μΩ cm, respectively, in order of increasing Pt content.
ACCESSION #
9822810

 

Related Articles

  • Novel Abrasive-Free Planarization of 4H-SiC (0001) Using Catalyst. Hara, Hideyuki; Sano, Yasuhisa; Mimura, Hidekazu; Arima, Kenta; Kubota, Akihisa; Yagi, Keita; Murata, Junji; Yamauch, Kazuto // Journal of Electronic Materials;Aug2006, Vol. 35 Issue 8, pL11 

    A new abrasive-free planarization method for silicon carbide (SiC) wafers was proposed using the catalytic nature of platinum (Pt). We named it catalystreferred etching (CARE). The setup equipped with a polishing pad made of Pt is almost the same as the lapping setup. However, CARE chemically...

  • Strain in porous Si formed on a Si (100) substrate. Bai, Gang; Kim, Kun Ho; Nicolet, Marc-A. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2247 

    The strain in a porous Si layer formed by anodization of a crystalline p+-Si(100) wafer in a HF electrolyte was measured by double-crystal x-ray diffractometry. The perpendicular strain in the as-formed porous Si layer is ∼10-3. The parallel strain is not measurable (<10-4). Upon annealing...

  • Measurement of silicon interstitial diffusivity. Griffin, P. B.; Fahey, P. M.; Plummer, J. D.; Dutton, R. W. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p319 

    A conceptually simple experiment to measure silicon interstitial diffusivity is described. The structure uses a silicon wafer with buried layers deep in the bulk. Oxidation of the wafer surface generates interstitials that diffuse into the wafer and enhance the buried layer diffusion. The...

  • X-ray topography of growth striations in Czochralski-grown Si wafers. Imai, Masato; Noda, Hiroyuki; Shibata, Masahiro; Yatsurugi, Yoshifumi // Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p395 

    Growth striations in Czochralski-grown Si wafers have been observed by a scanning x-ray double-crystal method. We confirmed that the striations on the topographs relate to the variation of oxygen concentration.

  • Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)]. Yew, Tri-Rung; O, Kenneth; Reif, Rafael // Applied Physics Letters;6/13/1988, Vol. 52 Issue 24, p2061 

    Reprints a portion of the paper 'Silicon epitaxial growth on (100) patterned oxide wafers at 800 degrees centigrade by ultra-low pressure chemical vapor deposition,' published in a 1988 issue of 'Applied Physics Letters.' Deposition of the epitaxial layers; In situ argon sputter cleaning step;...

  • Automated handling of ultra-thin silicon wafers. Schraub, F.A. Tony // Solid State Technology;Sep2002, Vol. 45 Issue 9, p59 

    Focuses on the use of automation procedures in handling ultra-thin silicon wafers. Forecast demand for thin silicon wafers; Probable handling process for a range of wafer thicknesses; Minimization of stress during handling; Problems with electrostatic discharge, contamination, corrosion and...

  • Laser writing of high-purity gold lines. Jubber, M.; Wilson, J. I. B.; Davidson, J. L.; Fernie, P. A.; John, P. // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1477 

    Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 μΩ cm, comparable with bulk gold, were...

  • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Canham, L. T. // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1046 

    Indirect evidence is presented that free-standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of...

  • SEMI SMG Reports Q2 Shipments.  // Advanced Packaging;Nov2003, Vol. 12 Issue 11, p12 

    Reports on the quarterly analysis of the silicon wafer industry conducted by SEMI Silicon Manufacturers Group (SMG) indicating that worldwide silicon wafer area shipments increased by eight percent during the second quarter of 2003 when compared to the first quarter. Background on SMG; Total...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics