Defects in neutron irradiated SiC

Nagesh, V.; Farmer, J. W.; Davis, R. F.; Kong, H. S.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1138
Academic Journal
Deep level transient spectroscopy and resistivity measurements have been used to characterize defects in as-grown and neutron irradiated epitaxially grown 3C-SiC on Si(100) substrates. The thick epilayers were free of defects; neutron irradiation induced an electron trap with an activation energy of 0.49 eV. The SiC-Si interface has a large density of defects and dislocations. Most of the irradiation defects are confined to the lower two-thirds of the band gap. Ninety percent of these defects can be removed by annealing at 350 °C.


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