TITLE

Defects in neutron irradiated SiC

AUTHOR(S)
Nagesh, V.; Farmer, J. W.; Davis, R. F.; Kong, H. S.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1138
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deep level transient spectroscopy and resistivity measurements have been used to characterize defects in as-grown and neutron irradiated epitaxially grown 3C-SiC on Si(100) substrates. The thick epilayers were free of defects; neutron irradiation induced an electron trap with an activation energy of 0.49 eV. The SiC-Si interface has a large density of defects and dislocations. Most of the irradiation defects are confined to the lower two-thirds of the band gap. Ninety percent of these defects can be removed by annealing at 350 °C.
ACCESSION #
9822806

 

Related Articles

  • Characterization and Simulation of Neutron Irradiated JBS Silicon Carbide Diode Structures. Popelka, Stanislav; Hazdra, Pavel; Záhlava, Vít // Key Engineering Materials;2014, Vol. 605, p151 

    The effect of radiation damage produced by fast neutrons on characteristics of JBS diodes produced on 4H-SiC epilayers was investigated. 1200V JBS diodes from Cree were irradiated in nuclear reactor by fast neutrons with fluences ranging from 1.3x1013 to 4x1014 cm-2 (1MeV NIEL equivalent in Si)....

  • Neutron Irradiation, Amorphous Transformation and Agglomeration Effects on the Permittivity of Nanocrystalline Silicon Carbide (3C-SiC). Huseynov, Elchin M. // NANO;Mar2018, Vol. 13 Issue 3, p-1 

    Nanocrystalline 3C-SiC is irradiated by neutron flux (n/cm2s) up to 20h in the TRIGA Mark II type research reactor. At the first stage, silicon carbide nanoparticles were analyzed by scanning electron microscope (SEM) and transmission electron microscope (TEM) devices before and after neutron...

  • Unidirectional formation of tetrahedral voids in irradiated silicon carbide. Kondo, S.; Katoh, Y.; Snead, L. L. // Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p163110 

    The {111} tetrahedral voids induced by neutron irradiation in 3C-SiC were found to be spatially oriented in only one of two possible directions. The tetrahedral shape was unexpected as the surface-to-volume ratio is larger than the alternative {111} octahedral void common in both metals and...

  • Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects. Muzha, A.; Fuchs, F.; Tarakina, N. V.; Simin, D.; Trupke, M.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.; Dyakonov, V.; Krueger, A.; Astakhov, G. V. // Applied Physics Letters;12/15/2014, Vol. 105 Issue 24, p1 

    Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication...

  • The Effect of Hydrogen Etching on the Electrical Properties of Autoepitaxial Silicon Carbide Layers. Zelenin, V. V.; Davydov, D. V.; Korogodskiı, M. L.; Lebedev, A. A. // Technical Physics Letters;May2002, Vol. 28 Issue 5, p382 

    Experimental data showing that preliminary hydrogen etching of a SiC substrate influences the concentration of donors or acceptors in autoepitaxial SiC layers are presented. The impurity concentration in the epitaxial layers grown on etched and unetched substrates may differ by an order of...

  • Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum. Bauman, D. A.; Gavrilin, A. V.; Ivantsov, V. A.; Morozov, A. M.; Kuznetsov, N. I. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1132 

    4H-SiC epilayers were grown by a liquid-phase epitaxy in vacuum. It was found that the seed layer with steps characteristic of liquid-phase epitaxy should be preliminary deposited on the substrate. It is demonstrated that growth in a vacuum leads to a decrease in the concentration of...

  • The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation. Zelenin, V. V.; Korogodskiı, M. L.; Lebedev, A. A. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1120 

    Results obtained in studying CVD-grown p-type undoped epitaxial 6H-SiC layers by secondaryion mass spectrometry are reported. The possible sources of background impurity, the mechanism of its incorporation into a layer, and the relationship between stoichiometry and adsorption, on the one hand,...

  • Some Aspects of SiC CVD Epitaxy. Zelenin, V. V.; Korogodskiı, M. L.; Lebedev, A. A. // Semiconductors;Oct2001, Vol. 35 Issue 10, p1117 

    A brief comparative analysis of techniques for the CVD epitaxy of SiC is made. Two tendencies in the use of inner reactor equipment are distinguished. Irrespective of the design features and the active gases used, chemical reactions of hydrogen with the interior of the reactor occur concurrently...

  • Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy. Savkina, N. S.; Ratnikov, V. V.; Rogachev, A. Yu.; Shuman, V. B.; Tregubova, A. S.; Volkova, A. A. // Semiconductors;Jul2002, Vol. 36 Issue 7, p758 

    A SiC layer was grown by vacuum sublimation epitaxy on porous silicon carbide. A porous SiC layer about 10 µm thick was fabricated by electrochemical etching of an off-axis 6H-SiC substrate. The epitaxial layer was ∼ 10 µm thick. Structural and optical properties of the initial...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics