Planar avalanche photodiode with a low-doped, reduced curvature junction

Chi, G. C.; Muehlner, D. J.; Ostermayer, F. W.; Freund, J. M.; Pawelek, R.; McCoy, R. J.; Peticolas, L. J.; Mattera, V. D.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1158
Academic Journal
A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated absorption and multiplication structure grown by vapor phase epitaxy. The n--InP top layer and guard ring conventionally used for planar devices were not needed. Two-dimensional device modeling indicates that the reduced junction curvature and low doping can prevent edge breakdown and greatly suppress the surface field.


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