Superior characteristics of thermal oxide layers grown on amorphous silicon films

Wu, Ching-Yuan; Chen, Chiou-Feng
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1167
Academic Journal
Thermal oxide layers grown on polycrystalline and amorphous silicon films have been analyzed and compared by using scanning electron microscope (SEM) photographs, ramp-voltage-stressed current-voltage (I-V) measurements, and constant current stress. The asperity effect observed from SEM photographs and the ramp-voltage-stressed I-V technique is found to be less serious for the thermal oxides grown on the amorphous silicon films, resulting in a smaller leakage current and a larger electron fluence endurance. These superior characteristics enable the amorphous silicon to be a good candidate for further scaled nonvolatile memory device applications.


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