TITLE

Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode

AUTHOR(S)
Li, W-Q.; Bhattacharya, Pallab K.; Juang, F-Y.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1176
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A high-gain photodiode in which the internal gain can result from either potential barrier lowering or mass filtering action, depending on device geometry and bias conditions, is proposed and demonstrated. The photodiode structure is similar to a modulated barrier diode and uses In0.53Ga0.47As and InGaAs/InAlAs superlattice absorption regions. The superlattice helps to reduce the dark current and aids in mass filtering. The devices reported here were made with multilayered InP-based materials grown by molecular beam epitaxy and exhibit responsivity as high as 1000 A/W.
ACCESSION #
9822778

 

Related Articles

  • Strained-layer Ga1-xInxAs/InP avalanche photodetectors. Gershoni, D.; Temkin, H.; Panish, M. B. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1294 

    We have investigated the electrical and optical properties of avalanche photodiodes with the absorption region formed by Ga1-x InxAs/InP strained-layer superlattices. High quality structures with the In concentration x as high as 1 have been grown by gas source molecular beam epitaxy. We have...

  • High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range. Mohseni, H.; Razeghi, M.; Brown, G. J.; Park, Y. S. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2107 

    We report on the demonstration of high-performance p-i-n photodiodes based on type-II InAs/GaSb superlattices with 50% cut-off wavelength λ[sub c]=16 μm operating at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by x-ray...

  • Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes. Jóźwikowski, K.; Kopytko, M.; Rogalski, A.; Jóźwikowska, A. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 7, p074519 

    An enhanced original computer program is applied to explain in detail the current-voltage characteristics of n-on-p long wavelength infrared HgCdTe photodiodes. The computer program solves the system of nonlinear continuity equations for carriers and Poisson equations. In the model ideal diode...

  • Photocurrent gain mechanism in Schottky barrier photodiodes with negative average electric field. Rivera, C.; Pau, J. L.; Muñoz, E. // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p263505 

    A photocurrent gain mechanism which takes advantage of the piezoelectric fields present in devices based on polar heterostructures is proposed. Piezoelectrically induced electric fields can be designed to generate a negative average electric field (NAF) region under certain bias conditions. For...

  • Electronic state localization in semiconductor superlattices. Lang, Roy; Nishi, Kenichi // Applied Physics Letters;1984, Vol. 45 Issue 1, p98 

    It is shown that in semiconductor superlattices slight fluctuations in the layer thicknesses and alloy compositions are likely to cause strong localization of electronic states. Such localization will hinder miniband formation or band folding expected in an ideal superlattice. The localization...

  • High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors. Kurtz, S. R.; Biefeld, R. M.; Dawson, L. R.; Fritz, I. J.; Zipperian, T. E. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1961 

    Both large photoconductive gain and long wavelength photoresponse were observed in lateral photodetectors constructed from type II, InAsSb, strained-layer superlattices. In a novel, four-layer superlattice, gain values as large as 90 are reported with a long wavelength cutoff of 8.7 μm at 77...

  • GexSi1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm. Temkin, H.; Pearsall, T. P.; Bean, J. C.; Logan, R. A.; Luryi, S. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p963 

    Properties of GexSi1-x strained-layer p-i-n detectors, in which the strained-layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum...

  • Proton isolated In0.2Ga0.8As/GaAs strained-layer superlattice avalanche photodiode. Bulman, G. E.; Myers, D. R.; Zipperian, T. E.; Dawson, L. R. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p1015 

    We have fabricated the first proton isolated strained-layer superlattice (SLS) avalanche photodiode. The grown In0.2Ga0.8As/GaAs p+n SLS structure was bombarded outside the active region with 220 keV protons to a total dose of 1×1015cm-2. These first nonoptimized devices exhibit a breakdown...

  • Magneto-optics of InAs/Ga[sub 1-x]In[sub x]Sb infrared superlattice diodes. Fuchs, F.; Ahlswede, E.; Weimar, U.; Pletschen, W.; Schmitz, J.; Hartung, M.; Jager, B.; Szmulowicz, F. // Applied Physics Letters;12/21/1998, Vol. 73 Issue 25 

    Spectrally resolved measurements of the responsivity of infrared photodiodes based on InAs/(GaIn)Sb superlattices (SL) were performed in applied magnetic fields. For the field oriented parallel to the growth axis, interband Landau transitions related to both the center and the edge of the SL...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics