Ohmic contacts to n-type GaAs using high-temperature rapid thermal annealing for self-aligned processing

Chen, C. L.; Mahoney, L. J.; Woodhouse, J. D.; Finn, M. C.; Nitishin, P. M.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1179
Academic Journal
We have formed Ge/Pd/W/Au and Ge/Mo/W/Au ohmic contacts to n-type GaAs by using a high-temperature rapid thermal annealing technique. The annealing schedule is compatible with that used for ion implantation activation, and the contact resistances (mid 10-6 Ω cm2) achieved are slightly higher than those for the commonly used Ni/Ge/Au alloyed contact. The Ge/Pd/W/Au contact maintains a good surface morphology and can be used as the implantation mask in self-aligned processes for devices such as heterojunction bipolar transistors.


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