TITLE

Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

AUTHOR(S)
Lee, H. C.; Hariz, A.; Dapkus, P. D.; Kost, A.; Kawase, M.; Garmire, E.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1182
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high-purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/cm2 is reported.
ACCESSION #
9822771

 

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