Quantitative theory of optical properties of HgTe-CdTe superlattices

Zoryk, A.; Jaros, M.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1191
Academic Journal
We have performed full-scale calculations of the optical properties of (001) HgTe-CdTe superlattices, of period ∼60 Å. We present the superlattice band gaps and oscillator strengths for the principal transitions as a function of HgTe layer width, in good agreement with experiment. The valence-band offset is 370 meV. Our results highlight the importance of the degree of localization of interface states in determining the optical properties of the superlattice.


Related Articles

  • Extended infrared response of InAsSb strained-layer superlattices. Kurtz, S. R.; Osbourn, G. C.; Biefeld, R. M.; Dawson, L. R.; Stein, H. J. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p831 

    Strained-layer superlattices of InAsSb were grown with low densities of dislocations and microcracks for optical characterization to determine the suitability of these structures for infrared photodetectors. Infrared transmission measurements revealed absorption throughout the 8–12 μm...

  • Ultrafast optical generation and remote detection of terahertz sound using semiconductor superlattices. Trigo, M.; Eckhause, T. A.; Wahlstrand, J. K.; Merlin, R.; Reason, M.; Goldman, R. S. // Applied Physics Letters;7/9/2007, Vol. 91 Issue 2, p023115 

    The authors introduce an all-optical approach to study the propagation of high frequency acoustic phonons in which the generation and detection involves two spatially separated superlattices ∼1 μm apart. Propagating modes of frequencies up to ∼1 THz escape from the superlattice...

  • Photovoltaic transistors based on a steady-state internal polarization effect in asymmetric.... Chun-Ting Liu; Luryi, Serge // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p393 

    Examines the photovoltaic transistors in asymmetric semiconductor superlattices based on a steady-state internal polarization effect. Generation of steady-state photovoltage; Conductivity of the transistor channel in photovoltaic transistors; Generation of electron-hole pairs with uniform rate.

  • High quality InGaAsP/InP multiple quantum wells for optical modulation from 1 to 1.6 mum. Chiu, T.H.; Zucker, J.E.; Woodward, T.K. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3452 

    Examines the growth of lattice matched InGaAsP/InP superlattices with satellite diffraction peaks using chemical beam epitaxy. Application of the superlattice in the wavelength range 1 to 1.6 micrometers; Measurement of the widths of the satellite peaks; Exhibition of excitonic feature.

  • Compatible laser emission and optical waveguide modulation at 1.5 mum using Wannier-Stark.... Bigan, E.; Harmand, J.C. // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1936 

    Investigates the electroabsorption properties of an indium gallium arsenide-indium aluminum arsenide superlattice optical waveguide. Measurements of the optical transmission; Use of low-energy oblique transitions below the superlattice band gap; Wavelength compatibility between laser and modulator.

  • Polarization properties of a vertical cavity surface emitting laser using a fractional layer.... Chavez-Pirson, A.; Ando, H.; Saito, H.; Kanbe, H. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3082 

    Investigates the polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice (FLS) gain medium. Anisotropy of the gain medium; Range of room-temperature wavelength lasing; Linear polarization states in the FLS surface emitting laser.

  • Optical properties of HgTe-CdTe superlattices. Wu, G. Y.; Mailhiot, C.; McGill, T. C. // Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p72 

    The first theoretical calculation of the optical properties of HgTe-CdTe superlattices is presented. The envelope function method is used to obtain the superlattice band structure, and then an interpolation scheme is employed to compute ε2(ω) the imaginary part of a dielectric function....

  • Effect of annealing on the optical properties of HgTe-CdTe superlattices. Leopold, D. J.; Broerman, J. G.; Peterman, D. J.; Wroge, M. L. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p969 

    HgTe-CdTe superlattices of high crystalline quality, and with negligible interdiffusion, have been successfully grown at low substrate temperatures (150–170 °C) by molecular beam epitaxy. Optical spectra exhibiting multiple steplike absorption edge features have been measured on...

  • Optical detection of high-field domains in GaAs/AlAs superlattices. Grahn, H. T.; Schneider, H.; Klitzing, K. v. // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1757 

    We investigated the formation of high-field domains in undoped GaAs/AlAs superlattices under strong illumination. The photocurrent-voltage characteristics showed an oscillatory-like behavior which is attributed to the existence of high-field domains. We used photoluminescence (PL) spectroscopy...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics