Thin-film photoconductor-electroluminescent memory device with a high brightness and a wide and stable hysteresis

Thioulouse, P.; Gonzalez, C.; Solomon, I.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1203
Academic Journal
An improved thin-film photoconductor-electroluminescent memory and display device is described, which integrates an optimized ZnS:Mn active layer, Ta2O5 insulating films, and a-Si1-xCx[ATOTHER]@B:[/ATOTHER] H photoconducting material. The performance with a 1-kHz sinewave excitation is an hysteresis width of [bar_over_tilde:_approx._equal_to]25 V, an on luminance of [bar_over_tilde:_approx._equal_to]650 cd/m2, and an off luminance of [bar_over_tilde:_approx._equal_to]0.1 cd/m2. The memory effect shows no degradation over an estimated operating time of 2000 h. The electrical on switching time is shorter than 10 μs. The performance of a full-size panel based on this structure is briefly discussed.


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