TITLE

Thin-film photoconductor-electroluminescent memory device with a high brightness and a wide and stable hysteresis

AUTHOR(S)
Thioulouse, P.; Gonzalez, C.; Solomon, I.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1203
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An improved thin-film photoconductor-electroluminescent memory and display device is described, which integrates an optimized ZnS:Mn active layer, Ta2O5 insulating films, and a-Si1-xCx[ATOTHER]@B:[/ATOTHER] H photoconducting material. The performance with a 1-kHz sinewave excitation is an hysteresis width of [bar_over_tilde:_approx._equal_to]25 V, an on luminance of [bar_over_tilde:_approx._equal_to]650 cd/m2, and an off luminance of [bar_over_tilde:_approx._equal_to]0.1 cd/m2. The memory effect shows no degradation over an estimated operating time of 2000 h. The electrical on switching time is shorter than 10 μs. The performance of a full-size panel based on this structure is briefly discussed.
ACCESSION #
9822758

 

Related Articles

  • Digital thin-film color optical memory. Chi, C. J.; Steckl, A. J. // Applied Physics Letters;1/8/2001, Vol. 78 Issue 2, p255 

    A promising optical memory device called digital thin-film (DTF) color optical memory is presented. The DTF optical memory utilizes localized regions of varying thickness to adjust the spectral characteristic of reflected light from a broad band source. The DTF structure has been fabricated by...

  • Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices. Fujimura, Norifumi; Ishida, Tadashi; Yoshimura, Takeshi; Ito, Taichiro // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p1011 

    We have proposed ReMnO3 (Re:rare earth) thin films as a new candidate for nonvolatile memory devices. In this letter, we report on fabrication of (0001) YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire, and (111)Pt/(111)MgO using rf magnetron sputtering. We succeeded in obtaining (0001)...

  • Optoelectronic logical gates "AND", "OR" and "NOT". Porada, Zbigniew; Schabowska-Osiowska, Elzbieta // Active & Passive Electronic Components;Jun2004, Vol. 27 Issue 2, p95 

    Optoelectronic AND, OR and NOT logical gates were composed of thin film photoconducting and electroluminescent elements, made of cadmium sulphide and zinc sulphide, respectively, doped with copper, chlorine and manganese. The gates consisted of several photoconducting elements and one...

  • Optimization of Thin Polyvinylcarbazole Spin Coated Films Applicable in Organic Based Devices. Mladenova, Daniela Lyubenova; Kazacov, Roumen Hristov; Karashanova, Daniela Bogdanova; Milenkov, Viktor Stoychev; Dobreva, Tatyana Stamova; Budurova, Desislava Stojanova; Sinigersky, Vesselin Angelov; Zhivkov, Ivaylo Tzankov // Annual Journal of Electronics;2010, Vol. 4 Issue 1, p104 

    Polyvinylcarbazole (PVK) is organic semiconductor with remarkable photoconductivity and electroluminescence in the visible and UV region. It is apt to crystallize even at low solution concentration. The aim of this study was to establish optimized conditions for spin coating deposition of PVC...

  • Texturization of polycrystalline silicon films using excimer-laser processing for memory device.... Yu, C.; Mathews, V.K. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1501 

    Investigates a technique for texturizing polycrystalline silicon films using excimer laser processing for memory device applications. Sensitivity of the degree of texturization to both film-deposition and laser fluence; Use of polycrystalline silicon film as capacitor-storage node; Analysis of...

  • Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. Min Seung Lee; Dong Uk Lee; Jae-Hoon Kim; Eun Kyu Kim; Won Mok Kim; Won Ju Cho // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1385 

    We fabricated the floating gated non-volatile memory devices with Au nano-particles embedded in SiO1.3N1 and SiO2 dielectrics. The floating gate memory devices as a type of field effect transistor (FET) with the Au particle layer were fabricated with the thicknesses of tunneling barrier of 3 and...

  • Structural and electrical characterization of SrBi...Nb...O... thin films deposited on... Schwan, Ch.; Haibach, P. // Journal of Applied Physics;7/15/1999, Vol. 86 Issue 2, p960 

    Studies the structural and electrical characterization of strontium compound thin films deposited on yttrium barium copper oxide (YBCO). Application of YBCO in fabricating non-volatile memory devices; Methodology used in the experiment; X-ray diffraction of the thin films.

  • Nonvolatile polycrystalline silicon thin film transistor memory using silicon-rich silicon nitride as charge storage layer. Pei, Z.; Chung, A.; Hwang, H. L. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p223513 

    In this work, the authors report a memory device based on a Si thin film transistor (TFT) structure by incorporating silicon-rich silicon nitride (SRSN) film in the gate dielectric stacks as the charge storage layer. The SRSN film has a lower barrier for hole injection than the barrier for...

  • Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films. Bason, Y.; Klein, L.; Yau, J.-B.; Hong, X.; Ahn, C. H. // Applied Physics Letters;4/5/2004, Vol. 84 Issue 14, p2593 

    The transverse resistivity in thin films of La0.84Sr0.16MnO3 (LSMO) exhibits sharp field-symmetric jumps below TC. We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics