TITLE

Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition

AUTHOR(S)
Beltram, F.; Allam, J.; Capasso, F.; Koren, U.; Miller, B.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1170
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the operation of the first Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition. The undoped region of the p-i-n structure consists of 100 periods of alternating InP and Ga0.47In0.53As layers 100 Ã… thick with no intentional doping. dc multiplication higher than 20 and high-speed response with full width at half-maximum of 200 ps have been measured.
ACCESSION #
9822736

 

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