Influence of a constant current on Raman spectra of high mobility superlattices

Kempa, K.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1185
Academic Journal
A constant current in a semiconductor high mobility superlattice is shown to lead to a shift and broadening of the intrasubband plasmon loss peaks in the Raman spectrum. By a model calculation for GaAs-AlGaAs we find that the simple homogeneous drift approximation is not valid in the high current regime where the drift velocity of electrons is of the order of the Fermi velocity.


Related Articles

  • Phonon�Plasmon Interaction in Tunneling GaAs/AlAs Superlattices. Volodin, V. A.; Efremov, M. D.; Preobrazhenskii, V. V.; Semyagin, B. R.; Bolotov, V. V.; Sachkov, V. A.; Galaktionov, E. A.; Kretinin, A. V. // JETP Letters;6/10/2000, Vol. 71 Issue 11, p477 

    The phonon�plasmon interaction in tunneling GaAs[sub n]/AlAs[sub m] superlattices (m = 5 and 6=n=0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the...

  • Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Cuscó, R.; Artús, L.; Ibán˜ez, J.; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6567 

    We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The...

  • Micro-Raman characterization of the electronic properties of Si-doped GaAs layers grown on.... Gerster, J.; Schneider, J.M. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p69 

    Investigates the coupled modes of plasmons and LO phonons appearing in the Raman spectra of highly doped gallium arsenide layers. Examination of the local incorporation character of silicon on different crystal facets; Utilization of molecular beam epitaxy in growing silicon-doped gallium...

  • Stimulated Raman up conversion of a helicon by band-gap energy plasmons in a semiconductor. Kumar, Pawan; Tripathi, V. K. // Journal of Applied Physics;Jul2009, Vol. 106 Issue 1, p13312-1 

    Stimulated Raman up conversion of a helicon wave in a semiconductor, where free carrier plasma frequency equals band-gap energy divided by Planck’s constant, is investigated. The stimulated electron hole recombination drives a Langmuir wave. The free carrier density oscillations...

  • Phonon plasmon interaction in ternary group-III-nitrides. Kirste, Ronny; Mohn, Stefan; Wagner, Markus R.; Reparaz, Juan S.; Hoffmann, Axel // Applied Physics Letters;7/23/2012, Vol. 101 Issue 4, p041909 

    Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration....

  • Raman scattering from phonon-plasmon modes in Ga1-xAlxAs. Becker, R. J.; Luehrmann, P. F.; Langer, D. W. // Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p513 

    The relation for the frequencies of phonon-plasmon modes in two-component solutions is presented. Raman spectra from over 80 samples of Ga1-xAlxAs over a wide range of x values and varying electron concentrations have been fitted to predicted curves using this relationship. Data were taken at...

  • Observation of plasmons coupled with optical phonons in n-AlxGa1-xAs by Raman scattering. Yuasa, T.; Naritsuka, S.; Mannoh, M.; Shinozaki, K.; Yamanaka, K.; Nomura, Y.; Mihara, M.; Ishii, M. // Applied Physics Letters;1/15/1985, Vol. 46 Issue 2, p176 

    Raman scattering from Si-doped n-AlxGa1-xAs (x=0.25) grown by molecular beam epitaxy has been studied at room temperature. In addition to the optical phonon lines, three new Raman lines have been clearly observed in samples with high carrier concentrations (n>=1×1018 cm-3). These lines are...

  • Raman scattering determination of the energy difference between Γ and L conduction band minima in Ga1-xInxAsySb1-y. Cuscó, R.; Ibáñez, J.; Artús, L. // Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p091909 

    We report a Raman scattering determination of the energy difference EΓ-L between the Γ conduction-band minimum and the L valley minima in n-type Ga1-xInxAsySb1-y lattice matched to GaSb (x=0.15, y=0.13). A frequency downshift in the L+ phonon–plasmon coupled mode is observed...

  • Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure. Lin, Y. C.; Chiu, C. H.; Fan, W. C.; Chia, C. H.; Yang, S. L.; Chuu, D. S.; Lee, M. C.; Chen, W. K.; Chang, W. H.; Chou, W. C. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 12, p123510 

    The vibrational, electronic, and crystalline properties of n-type chlorine-doped ZnSe (ZnSe:Cl) layers with a carrier concentration from 8.2×1015 to 1.8×1018 cm-3 are studied by Raman spectroscopy. The spectral line shapes of the longitudinal-optical-phonon and plasmon coupling mode are...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics