Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry

Fishbein, Bruce J.; Plummer, James D.
April 1987
Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1200
Academic Journal
The diffusion of ion-implanted cesium in thermally grown SiO2 has been examined in the temperature range 700–1000 °C using Rutherford backscattering spectrometry (RBS). Silicon samples were oxidized and implanted with 5×1014 cm-2 133Cs at 145 keV and then annealed in nitrogen using a rapid thermal system for times ranging from several seconds to several hours. Cesium concentration profiles were measured using RBS for each anneal time and temperature. By observing the decay in the peak cesium concentration as a function of anneal time, a diffusivity of DCs =0.50 exp(-2.9eV/kT) cm2/s has been obtained. Other diffusion effects including cesium pile-up at the oxide interfaces and outdiffusion of cesium into the ambient have been studied qualitatively.


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