Abnormal-glow-discharge deposition of tungsten

Greenberg, K. E.
April 1987
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1050
Academic Journal
α-tungsten films that adhere well to silicon dioxide were deposited using a dc abnormal-glow discharge through WF6, H2, and Ar. Film resistivities on the order of 30 μΩ cm and deposition rates as high as 200 Å/min were obtained without heating the substrate externally. X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy measurements indicate that electron scattering at the grain boundaries has limited the conductivity of the plasma-deposited films. Tungsten films having resistivities within a factor of two times that of bulk tungsten were produced with a two-step process utilizing plasma and conventional chemical vapor deposition.


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