Channeling study of structural effects at the Al(111)/Si(111) interface formed by ionized cluster beam deposition

Jin, H.-S.; Yapsir, A. S.; Lu, T.-M.; Gibson, W. M.; Yamada, I.; Takagi, T.
April 1987
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1062
Academic Journal
Epitaxial Al(111)/Si(111) films grown by the ionized cluster beam technique have been studied using the high-energy He+ channeling technique. No observable strain has been detected between the Si substrate and the Al layer despite their large (∼25%) lattice mismatch. Displaced Al atoms have been observed in the Al film, which increases with the depth and reaches 30% near the Al/Si interface. A large step increase of dechanneling occurs at the Al/Si interface which might be accounted for by the existence of ‘‘semicoherent’’ interface in which four Al planes are matched to three Si planes.


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