High quality ZnSe films grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

Yokogawa, Toshiya; Ogura, Mototsugu; Kajiwara, Takao
April 1987
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1065
Academic Journal
High quality ZnSe layers have been successfully grown by low pressure metalorganic vapor phase epitaxy (MOVPE) using methylalkyls, dimethylzinc, and dimethylselenide. Streaks and Kikuchi lines were observed by reflective high-energy electron diffraction measurements. Also the sharp and strong excitonic emission line due to free exciton and no emissions related to deep levels or residual impurities were observed by photoluminescence measurements. These results show that the ZnSe layers are of good crystalline quality. Furthermore, good selective growth of the ZnSe films on structured substrates was easily achieved by using this low pressure MOVPE technique.


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