TITLE

Direct measurement of evaporation during rapid thermal processing of capped GaAs

AUTHOR(S)
Haynes, T. E.; Chu, W. K.; Picraux, S. T.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1071
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have directly measured the amounts of arsenic evaporated through very thin encapsulating films during rapid thermal processing (RTP). The evaporated molecules are condensed onto a copper film on a sapphire substrate and subsequently counted using 5 MeV Rutherford backscattering analysis. For 20-nm-thick Si, SiO2, and Si3N4 caps, we have determined the temperature ranges for which a 10-s RTP cycle produces less than 1×1015/cm2 of evaporated As. Preliminary measurements at higher temperatures of the thickness and time dependence of evaporation through SiO2 caps of 20 to 60 nm thicknesses are also presented and discussed in terms of the mechanism of As loss.
ACCESSION #
9822715

 

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