Optical detection of interwell-exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy

Sauer, R.; Harris, T. D.; Tsang, W. T.
April 1987
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1077
Academic Journal
We use photoluminescence excitation spectroscopy to show that excitons confined to single quantum wells in In0.53Ga0.47As/InP communicate through thin barriers. The experiments are performed on a sample grown by chemical beam epitaxy with four quantum wells of thicknesses between ∼18 and 60 Å separated by barriers as thin as 30 Å. Exciton transfer between adjacent wells is observed.


Related Articles

  • Long-range transport in excitonic dark states in coupled quantum wells. Snoke, D.; Denev, S.; Liu, Y.; Pfeiffer, L.; West, K. // Nature;8/15/2002, Vol. 418 Issue 6899, p754 

    Discusses the photoluminescence measurements of indium gallium arsenide quantum wells. Observation of an effect by which luminescence from excitons appears hundreds of micrometers away from the laser excitation spot; Band structure of quantum wells in the presence of electric field; Analysis of...

  • Magnetic excitons in near-surface quantum wells: experiment and theory. Kulakovskiı, V. D.; Kulik, L. V.; Yablonskiı, A. L.; Dzyubenko, A. B.; Gippius, N. A.; Tikhodeev, S. G.; Forchel, A. // Physics of the Solid State;May98, Vol. 40 Issue 5, p740 

    We have measured the photoluminescence spectra and photoluminescence excitation spectra of magnetic excitons in InGaAs/GaAs near-surface quantum wells in a magnetic field. We have quantitatively investigated the effect of dielectric enhancement of excitons in quantum wells brought about by...

  • Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition. Ko, T. S.; Lu, T. C.; Wang, T. C.; Chen, J. R.; Gao, R. C.; Lo, M. H.; Kuo, H. C.; Wang, S. C.; Shen, J. L. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 9, p093106 

    a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r-plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to...

  • Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells. Chichibu, SF.; Onuma, T.; Sota, T.; DenBaars, S. P.; Nakamura, S.; Kitamura, T.; Ishida, Y.; Okumura, H. // Journal of Applied Physics;2/15/2003, Vol. 93 Issue 4, p2051 

    Recombination dynamics of localized excitons in the best quality strained cubic In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells (MQWs) grown on 3C-SiC (001) were studied as functions of InN mole fraction x and temperature T. The MQWs exhibited large Stokes-type shifts although the full width at...

  • Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers. Sung, L.W.; Lin, H.H. // Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1107 

    Highly strained InGaAs/GaAs quantum wells grown at very low temperature (380 °C) have been studied. The critical thickness of the In[sub 0.38]Ga[sub 0.62]As quantum well is 8.8 nm and the photoluminescence peak is at 1.24 μm. An edge-emitting In[sub 0.388]Ga[sub 0.612]As/GaAs quantum-well...

  • Room-temperature random telegraph noise in luminescence from macroscopic InGaN clusters. Aoki, Takao; Nishikawa, Yukie; Kuwata-Gonokami, Makoto // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1065 

    We report on photoluminescence properties of individual macroscopically sized InGaN clusters that were formed in InGaN multiple quantum wells. Phase separation in InGaN results in the formation of clusters with a size of 1-2 μm with three different indium compositions. A small fraction (one...

  • Variation of the critical layer thickness with In content in strained InxGa1-xAs-GaAs quantum wells grown by molecular beam epitaxy. Andersson, T. G.; Chen, Z. G.; Kulakovskii, V. D.; Uddin, A.; Vallin, J. T. // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p752 

    The critical width Lc for misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1-xAs (0.1

  • Photoluminescence studies of InGaAs/InAlAs strained double quantum wells. Shen, W. Z.; Shen, S. C.; Chang, Y.; Tang, W. G.; Chen, J. X.; Li, A. Z. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5348 

    Presents photoluminescence studies of InGaAs/InAlAs strained double quantum wells. Experimental details; Results and discussion; Conclusion.

  • Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells. Sallese, J.M.; Carlin, J.F. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2331 

    Presents evidence of blue shift in the photoluminescence spectra of indium arsenide (InAs)/indium phosphide (InP) island like quantum wells. Reduction of the InP top barrier layer thickness; Use of surface quantum wells to probe the near surface properties; Identification of individual...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics