TITLE

Optical detection of interwell-exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy

AUTHOR(S)
Sauer, R.; Harris, T. D.; Tsang, W. T.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1077
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We use photoluminescence excitation spectroscopy to show that excitons confined to single quantum wells in In0.53Ga0.47As/InP communicate through thin barriers. The experiments are performed on a sample grown by chemical beam epitaxy with four quantum wells of thicknesses between ∼18 and 60 Å separated by barriers as thin as 30 Å. Exciton transfer between adjacent wells is observed.
ACCESSION #
9822708

 

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