New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

Levine, B. F.; Choi, K. K.; Bethea, C. G.; Walker, J.; Malik, R. J.
April 1987
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1092
Academic Journal
We demonstrate a novel 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs. Intersubband resonance radiation excites an electron from the ground state into the first excited state, where it rapidly tunnels out producing a photocurrent. We achieve a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.


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