TITLE

Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition

AUTHOR(S)
Ikeda, M.; Toda, A.; Nakano, K.; Mori, Y.; Watanabe, N.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/20/1987, Vol. 50 Issue 16, p1033
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 °C for a device with an 8-μm-wide and a 250-μm-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T0 was 138 K under cw operation. The wafer with the MQW structure composed of 100-Å-thick GaInP wells and 40-Å-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.
ACCESSION #
9822678

 

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