Depth profiling of As at the SiO2/Si interface using secondary ion mass spectrometry

Morgan, Alan E.; Maillot, Philippe
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p959
Academic Journal
Arsenic profiles across the SiO2/Si interface have been measured with secondary ion mass spectrometry under different O+2 bombardment conditions using As implanted into SiO2 and Si for calibration purposes. Radiation-enhanced segregation causes interfacial pile-up in profiles obtained under oblique incidence bombardment both with and without O2 backfill. Thus, implantation profiles through SiO2 are best measured using near normal incidence bombardment. However, if As is actually piled up at the interface, oblique incidence bombardment in vacuo is preferable since oxygen saturation conditions broaden the interfacial peak.


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