Resonant tunneling of holes in AlAs/GaAs triple barrier diodes

Nakagawa, T.; Fujita, T.; Matsumoto, Y.; Kojima, T.; Ohta, K.
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p974
Academic Journal
Resonant tunneling of holes is observed at 85 K in an AlAs/GaAs/AlAs/GaAs/AlAs triple barrier structure sandwiched by p-GaAs layers. Two to seven resonances are observed in the current-voltage characteristics for all samples and bias polarities. The resonance peak voltages are observed to decrease according to the increase of the well thickness. The edge energies of hole subbands in the well are calculated from the resonance voltages, and comparison with the theoretical value is discussed.


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