Supplemental multilevel interconnects by laser direct writing: Application to GaAs digital integrated circuits

Black, Jerry G.; Doran, Scott P.; Rothschild, Mordechai; Ehrlich, Daniel J.
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1016
Academic Journal
A nonperturbing sequence of laser direct-writing processes is described for applying supplemental multilevel interconnects on partially or fully fabricated circuits. The approach adds multiple levels of laser direct-written tungsten metallization and is demonstrated here for the assembly of a simple latch circuit on a standard GaAs digital test chip. Principal applications are for subsystem verification, device testing, restructuring, and fault avoidance on Si and GaAs circuits.


Related Articles

  • Femtosecond dynamics in semiconductor lasers: Dark pulse formation. Kauer, M.; Cleaver, J. R. A.; Baumberg, J. J.; Heberle, A. P. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    We track the dynamic response of GaAs quantum-well semiconductor diode lasers after injection of a femtosecond pulse, using ultrafast upconversion. The continuous-wave emission shows gain dynamics and relaxation oscillations on timescales of 1–100 ps. The recirculating femtosecond pulse...

  • Surface-emitting GaAlAs/GaAs linear laser arrays with etched mirrors. Yang, J. J.; Sergant, M.; Jansen, M.; Ou, S. S.; Eaton, L.; Simmons, W. W. // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1138 

    Surface-emitting GaAlAs/GaAs linear laser arrays are fabricated using the ion milling technique. Low threshold current and differential quantum efficiency comparable to these of the cleaved device are obtained.

  • Continuous control of coherence length in separately pumped (AlGa)As lasers. Yamamoto, Saburo; Hijikata, Toshiki // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1129 

    Continuous control of coherence length is realized in the output power region of 3–5 mW by changing the current flowing into the loss region of separately pumped (AlGa)As lasers. The controllable saturable absorption makes lasing spectra multimode and broadens the linewidth of an...

  • Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques. Sweeney, Stephen J.; Knowles, Gareth; Sale, Terry E. // Applied Physics Letters;2/12/2001, Vol. 78 Issue 7, p865 

    By measuring visible AlGaAs/AlGaInP vertical-cavity surface-emitting lasers (VCSELs) and similar edge-emitting lasers (EELs) as a function of temperature and pressure, we study the contributions of electron leakage and gain-cavity detuning on the threshold current, I[sub th], of VCSELs. In the...

  • 5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet. Ou, S. S.; Yang, J. J.; Jansen, M. // Applied Physics Letters;10/29/1990, Vol. 57 Issue 18, p1861 

    GaAs/GaAlAs laser diodes with reactive ion etched facets have been demonstrated for the first time with high output powers (5 W from 100-μm-wide apertures), high output power density (15 MW/cm2), and high slope efficiencies (66%) in junction-up configuration under quasi-cw operation. Mirror...

  • Watt-range, coherent, uniphase powers from phase-locked arrays of antiguided diode lasers. Botez, D.; Jansen, M.; Mawst, L.J.; Peterson, G.; Roth, T.J. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2070 

    Reports on the optimization of twenty-element near-resonant AlGaAs/GaAs arrays of antiguided diode lasers for maximum intermodal discrimination and large Strehl ratio. Antiguided-array structure types used; Major improvements made over previous structures; Intermodal discrimination critical in...

  • Strip-loaded semiconductor ring lasers employing multimode interference output couplers. Krauss, T.; DeLaRue, R.M. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2788 

    Examines the fabrication of strip-loaded semiconductor ring lasers in gallium arsenide/aluminum gallium arsenide system. Use of multimode interference output couplers to improve the output curve of the lasers; Sensitivity of the lasers to back reflections; Technique for reducing the threshold...

  • Lasing characteristics of lasers with a vertical cavity based on In[sub 0.2]Ga[sub 0.8]As quantum wells. Gaısler, V. A.; Toropov, A. I.; Bakarov, A. K.; Kalagin, A. K.; Moshegov, N. T.; Ténné, D. A.; Kachanova, M. M.; Kopp, O. R.; Nenasheva, L. A.; Medvedev, A. S. // Technical Physics Letters;Oct99, Vol. 25 Issue 10, p775 

    Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 µm aperture lasers operating in the pulsed regime.

  • Continuous-wave operation of a blue vertical-cavity surface-emitting laser based on.... Yamada, Norihide; Kaneko, Yasuhisa // Applied Physics Letters;4/1/1996, Vol. 68 Issue 14, p1895 

    Examines the fabrication of indium gallium arsenide (GaAs)/GaAs vertical-cavity surface-emitting laser on GaAs substrate. Formation of continuous-wave lasing operation at less than 270 Kelvin; Observation of blue-layer emission in surface-emitting lasers; Improvement of the wavelength lasing...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics