Thin-film reaction between Ti and Si3N4

Barbour, J. C.; Kuiper, A. E. T.; Willemsen, M. F. C.; Reader, A. H.
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p953
Academic Journal
The thermal reaction of Ti with Si3N4 was studied over the temperature range from 500 to 800 °C with Auger electron spectroscopy, Rutherford backscattering spectrometry, and transmission electron microscopy. The initial reaction consumes part of the silicon nitride and yields a two-layer morphology of Ti(N) on top of Ti5Si3. As the reaction proceeds, the Ti5Si3 layer is converted to TiSi2. At 800 °C, a multilayer morphology is observed containing primarily TiN and TiSi2.


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