TITLE

Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy

AUTHOR(S)
Temkin, H.; Chu, S. N. G.; Panish, M. B.; Logan, R. A.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p956
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single InGaAs/InP quantum wells and superlattices grown by gas source molecular beam epitaxy were subjected to brief anneals at temperatures in the 600–850 °C range. The resulting increases in the well thickness and changes in composition were monitored by low-temperature photoluminescence and transmission electron microscopy. Very sharp well-barrier interfaces are found to be present even after annealing at the highest anneal temperature. These results can be modeled assuming diffusivity proportional to the square of concentration with D0=7×1010 cm2/s and an activation energy of Q=5.8 eV.
ACCESSION #
9822615

 

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