Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator

Inoue, Tomoyasu; Hamasaki, Toshihiko
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p971
Academic Journal
A high-speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed opening, which is due to nonuniformity in heat dissipation toward the substrate in the vicinity of the seed opening. The molten zone width and velocities of the melt front and growth front were quantitatively analyzed using digital film motion analysis. The growth front velocity was found to drastically change by ∼30% across the seed opening.


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