Oxygen implantation for internal gettering and reducing carrier lifetime

Weiner, David H.; Wong, S. Simon; Drowley, Clifford I.
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p986
Academic Journal
Implantation of oxygen into Si wafers has been studied as a method to create a defect region for gettering impurities. An epitaxial layer is subsequently deposited to bury the defects. The nature of the defects as well as the effects on the quality of epitaxy, carrier lifetime, and diode leakage current is characterized.


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