TITLE

Dependence of the conduction in In0.53Ga0.47As-InP double-barrier tunneling structures on the mesa-etching process

AUTHOR(S)
Vuong, T. H. H.; Tsui, D. C.; Tsang, W. T.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1004
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measurements of the current-voltage curves of several In0.53Ga0.47As-InP double-barrier tunneling structures are presented as a function of the etching process used. It is shown that the large nontunneling leakage current previously observed in devices etched with the HBr:H3PO4:K2Cr2O7 solution is caused by conduction at the etched edges of the mesas. This leakage current is significantly reduced by the selective etching of the InGaAs from InP and the peak-to-valley ratio is thereby increased to a maximum value of 3.1 at 4.2 K. The resonance voltage values are symmetrical about zero bias in contrast to results obtained from similar structures of the AlGaAs-GaAs and HgTe-HgCdTe systems, and are in good agreement with theory for the more pronounced of the two resonances observed in these devices.
ACCESSION #
9822609

 

Related Articles

  • Maskless laser interferometric monitoring of InP/InGaAsP heterostructure reactive ion etching. Hayes, Todd R.; Heimann, P. A.; Donnelly, V. M.; Strege, K. E. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2817 

    Infrared laser interferometry is used to measure etch rate, measure wafer temperature, and identify heterostructure layers in situ during reactive ion etching, with or without masked regions. Interference between reflections from the etching wafer surface, buried heterointerfaces, and polished...

  • Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6. Pearton, S. J.; Hobson, W. S. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2186 

    The addition of SF6 to CH4/H2 discharges is shown to produce a significant increase in the selectivity for dry etching of both InGaAs and InP over AlInAs. The selectivity is a strong function of the dc bias on the sample during the reactive ion etching, with equirate removal of InGaAs and AlInAs...

  • Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy. Temkin, H.; Chu, S. N. G.; Panish, M. B.; Logan, R. A. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p956 

    Single InGaAs/InP quantum wells and superlattices grown by gas source molecular beam epitaxy were subjected to brief anneals at temperatures in the 600–850 °C range. The resulting increases in the well thickness and changes in composition were monitored by low-temperature...

  • Large monolithic two-dimensional arrays of GaInAsP/InP surface-emitting lasers. Liau, Z. L.; Walpole, J. N. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p528 

    A 1 mm×3 mm monolithic two-dimensional array (incoherent) of 112 mass-transported buried-heterostructure lasers with integrated beam deflectors has been fabricated with good uniformity. An average cw output of 14 mW per laser and an average optical flux of 57 W/cm2 have been obtained when...

  • New fabrication method for 1.3-μm GaInAsP/InP buried crescent lasers using a reactive ion beam etching technique. Kasukawa, Akihiko; Iwase, Masayuki; Hiratani, Yuji; Matsumoto, Narihito; Ikegami, Yoshikazu; Irikawa, Michinori; Kashiwa, Susumu // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1774 

    A 1.3-μm GaInAsP/InP buried crescent laser on a p-type InP substrate was demonstrated. An active region width narrower than 1.5 μm was achieved with good controllability and reproducibility using the newly introduced reactive ion beam etching technique for the etching process. Stable...

  • Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer. Tanaka, T.; Minagawa, S.; Kajimura, T. // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1391 

    Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the...

  • GaAs/AlGaAs single-mode optical waveguides with low propagation loss and strong optical confinement. Seto, M.; Shahar, A.; Deri, R. J.; Tomlinson, W. J.; Yi-Yan, A. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p990 

    Singe-mode optical waveguides have been fabricated with a saturated bromine water etchant using single-heterostructure GaAs/AlGaAs epitaxial material, with propagation losses as low as 0.6 dB/cm for 1.66 μm deeply etched ribs (Δneff[bar_over_tilde:_approx._equal_to]2.4) and losses below...

  • Spin-dependent tunneling in FM|semiconductor|FM structures. Vutukuri, S.; Chshiev, M.; Butler, W. H. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08K302 

    Here we show that ordinary band-structure codes can be used to understand the mechanisms of coherent spin-injection at interfaces between ferromagnets and semiconductors. This approach allows the screening of different material combinations for properties useful for obtaining high tunneling...

  • Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces. Olson, J. M.; Ahrenkiel, R. K.; Dunlavy, D. J.; Keyes, Brian; Kibbler, A. E. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1208 

    Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs lattice-matched...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics