New metastable defects in GaAs

Buchwald, W. R.; Johnson, N. M.; Trombetta, L. P.
April 1987
Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1007
Academic Journal
Two previously unreported metastable defects in n-type GaAs epitaxial layers grown by metalorganic chemical vapor deposition have been identified by deep level transient spectroscopy. These levels, here labeled M3 and M4, have activation energies for thermal emission of electrons of 0.31 and 0.61 eV, respectively. Formation of the M4 center and annealing of the M3 center are observed to take place when a reverse bias is applied to Schottky diodes at elevated temperatures. The reverse transition is observed under zero bias at elevated temperatures (e.g., 400 K). An additional metastable defect, labeled M2, with transformation properties similar to those of the M4 center and an emission activation energy of 0.64 eV, was observed in samples which received a rapid thermal anneal at temperatures of 900 °C and above.


Related Articles

  • Capacitance transient analysis of configurationally bistable defects in semiconductors. Levinson, M. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2628 

    Presents a study that examined the configurationally bistable defects in semiconductors using deep level capacitance transient spectroscopy. Background on deep level capacitance transient spectroscopy analysis; Analysis of the center-related defect in silicon semiconductors; Evaluation of the...

  • Metastable Hydrogen-Related Defects in Epitaxial n-GaAs Studied by Laplace Deep Level Transient Spectroscopy. Soltanovich, O. A.; Kolkovsky, Vl.; Yakimov, E. B.; Weber, J. // AIP Conference Proceedings;2014, Vol. 1583, p195 

    Metastable hydrogen-related M3/M4 defects in n-GaAs epilayers grown by MOVPE are investigated using the high-resolution Laplace DLTS technique. The clear separation of the M4 peak in two components is experimentally obtained. It is shown that the M4 components have different field dependences of...

  • High-temperature uniaxial stress apparatus for semiconductor defect symmetry determination. Yang, S.; Lamp, D. // Review of Scientific Instruments;Jan1993, Vol. 64 Issue 1, p221 

    A mechanical apparatus designed for use in deep level transient spectroscopy (DLTS) experiments and capable of applying more than 5 GPa pressure to a semiconductor crystal sample at temperatures from 300–450 K is described. This compound lever system applies a temperature-independent...

  • Coulomb Interaction between InAs/GaAs Quantum Dots and Adjacent Impurities. Engström, O.; Kaniewska, M.; Kaczmarczyk, M. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p297 

    Defects positioned close to a plane of quantum dots (QDs) are shown to be influenced by coulomb interaction effect when the quantum dots are charged by electrons. Signals from deep level transient spectroscopy (DLTS) measurement give rise to a mirror effect in the spectrum depending on movement...

  • Deep level defects in alpha particle irradiated 6H silicon carbide. Rybicki, George C. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p2996 

    Provides information on a deep level transient spectroscopy study of native and radiation induced defects in metal organic chemical vapor decomposition on hydrogen and silicon carbide (SiC) diodes. Overview of alpha particle irradiation of indium phospide; Carrier removal rate for...

  • As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN. Chen, Shang; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ishikawa, Kenji; Hori, Masaru; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu // Journal of Applied Physics;Sep2012, Vol. 112 Issue 5, p053513 

    Traps of energy levels Ec -0.26 and Ec -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of Ec -0.13 and Ec -0.65...

  • Electron traps in dislocation-free In-alloyed liquid encapsulated Czochralski GaAs and their annealing properties. Kitagawara, Y.; Noto, N.; Takahashi, T.; Takenaka, T. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1664 

    Electron traps in dislocation-free In-alloyed liquid encapsulated Czochralski (LEC) GaAs have been studied by deep level transient capacitance spectroscopy. Five traps are observed with activation energies ranging from 0.26 to 0.79 eV below the conduction band. The energies are closely equal to...

  • Interactions between bombardment-induced defects in GaAs. Makram-Ebeid, Sherif; Boher, Pierre; Lannoo, Michel // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p270 

    Interdefect electron hopping is shown to play an important role in the physical manifestations of radiation induced defects in GaAs. In fast electron irradiated n-GaAs, we are led to attribute the observed high-temperature deep level transient spectroscopy (DLTS) peaks to defect pairs each...

  • Transition mechanisms of two interacting DX centers in N-type AlGaAs using reverse-bias deep level transient spectroscopy and temperature-dependent pulse-width reverse-bias deep level transient spectroscopy methods. Wang, C. W.; Wu, C. H. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p3921 

    Presents a study which investigated the interaction mechanisms of the double DX centers under different applied pulse widths in gallium arsenide semiconductors. Description of the experimental arrangement; Analysis of the theory of reverse-bias deep level transient spectroscopy principles;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics