Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

Chen, T. R.; Utaka, K.; Zhuang, Y. H.; Liu, Y. Y.; Yariv, A.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p874
Academic Journal
A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.


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