TITLE

Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

AUTHOR(S)
Chen, T. R.; Utaka, K.; Zhuang, Y. H.; Liu, Y. Y.; Yariv, A.
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p874
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.
ACCESSION #
9822596

 

Related Articles

  • Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering. Thornton, R. L.; Mosby, W. J.; Chung, H. F. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2669 

    We describe results on a novel geometry of heterojunction bipolar transistor that has been realized by impurity-induced disordering. This structure is fabricated by a method that is compatible with techniques for the fabrication of low threshold current buried-heterostructure lasers. We have...

  • An accurate scaling approach for small-signal modeling of high-power HBT devices. Bousnina, Sami // Microwave & Optical Technology Letters;Oct2007, Vol. 49 Issue 10, p2429 

    This paper presents an accurate scaling approach for small-signal modeling of high-power multi-cell heterojunction bipolar transistors (HBTs). This approach is mainly based on the characterization of an elementary-cell device and a proper modeling of the metalwork structure surrounding the...

  • Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes. Schein, Friedrich-Leonhard; Winter, Markus; Böntgen, Tammo; von Wenckstern, Holger; Grundmann, Marius // Applied Physics Letters;1/13/2014, Vol. 104 Issue 2, p022104-1 

    We present oxide bipolar heterojunction diodes consisting of p-type ZnCo2O4 and n-type ZnO fabricated by pulsed-laser deposition. Hole conduction of ZnCo2O4 (ZCO) was evaluated by Hall and Seebeck effect as well as scanning capacitance spectroscopy. Both, ZCO/ZnO and ZnO/ZCO type...

  • News.  // Caterer & Hotelkeeper;9/28/2005, Vol. 195 Issue 4393, p31 

    The article provides information on a study by researchers in the U.S. on a heterojunction bipolar transistor (HBT) laser. The HBT laser uses AlGaAs optical confining layers. The device features three ports, an input, an electrical output and an optical output. As a result it could be used to...

  • Low-phase-noise transformer-based top-series QVCO using GaInP/GaAs HBT technology. Meng, C. C.; Tseng, S. C.; Chang, Y. W.; Su, J. Y.; Huang, G. W. // Microwave & Optical Technology Letters;Jan2007, Vol. 49 Issue 1, p215 

    The fully integrated GaInP/GaAs heterojunction bipolar transistor, transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The QVCO at 4.1...

  • Injection-locked GaInp/GaAs HBT frequency divider with stacked transformers. Hung-Ju Wei; Chinchun Meng; YuWen Chang; Guo-Wei Huang // Microwave & Optical Technology Letters;Oct2007, Vol. 49 Issue 10, p2602 

    The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and...

  • DC characteristics of AZO/GaN heterojunction bipolar transistors. Pan, C.-T.; Hou, R.-J.; Hsin, Y.-M.; Chiu, H.-C. // Electronics Letters;2/12/2009, Vol. 45 Issue 4, p230 

    A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120 µm2 exhibits a current gain of 5.8 at VBE=3.0 V. The anomalous high current gain is observed at low current level due to the leakage current....

  • SSH and SHH GaInP/GaAs HBT divide-by-3 prescalers with true 50% duty cycle. Tseng, S.C.; Meng, C.C.; Chen, W.Y. // Electronics Letters;7/6/2006, Vol. 42 Issue 14, p796 

    Two 50% duty cycle divide-by-3 prescalers – sample-sample-hold (SSH) and sample-hold-hold (SHH) prescalers – in the 2 µm GaInP/GaAs heterojunction bipolar transistor (HBT) technology are realised. Current switchable emitter couple logic D flip-flops are employed to form both...

  • Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter. Oda, Yasuhiro; Yokoyama, Haruki; Kurishima, Kenji; Kobayashi, Takashi; Watanabe, Noriyuki; Uchida, Masahiro // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p023503 

    Large conduction band edge discontinuity (ΔEc) at the emitter/base interface in InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor (HBT) is one of the possible reasons that the recombination process in the emitter/base depletion region dominates the characteristics of this HBT. We...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics