TITLE

Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow-rate modulation epitaxy

AUTHOR(S)
Kobayashi, Naoki; Horikoshi, Yoshiji
PUB. DATE
April 1987
SOURCE
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter deals with the atomically flat interfaces at GaAs/AlGaAs heterojunctions grown by a modified metalorganic chemical vapor deposition, flow-rate modulation epitaxy. Single quantum wells show low-temperature photoluminescence with narrower linewidths than those grown by conventional metalorganic chemical vapor deposition. An x-ray diffraction spectrum of (GaAs)2 (AlAs)2 superlattices exhibits no forbidden (003) and (001) diffractions, suggesting that the interfaces are fairly flat.
ACCESSION #
9822577

 

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