Degradation of band-gap photoluminescence in GaAs

Guidotti, D.; Hasan, Eram; Hovel, H. J.; Albert, Marc
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p912
Academic Journal
Evidence is presented to show that the degradation of near-band-gap photoluminescence emission in GaAs with time of exposure to low power, cw laser excitation can be attributed to a surface mechanism that is independent of surface oxidation and may involve an interaction between crystal point defects and the photogenerated electron-hole plasma near the surface.


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