Hydrogen in crystalline silicon: A deep donor?

Capizzi, M.; Mittiga, A.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p918
Academic Journal
An analysis of the hydrogen concentration profiles obtained from secondary ion mass spectrometry in boron-doped silicon points to a deep donor hydrogen state located ∼0.1 eV above the Fermi level for intrinsic material. The theoretical model takes into account both neutral and ionized hydrogen diffusion, the latter enhanced by a built-in electric field associated with the hydrogen doping gradient. The activation energies for the two diffusion processes are ∼1.2 and ∼0.8 eV, respectively. A formerly reported discrepancy between low- and high-temperature results is lifted.


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