Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure

Nabity, J. C.; Stavola, Michael; Lopata, J.; Dautremont-Smith, W. C.; Tu, C. W.; Pearton, S. J.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p921
Academic Journal
The effect of hydrogen plasma exposure upon shallow donors and DX centers in silicon-doped AlGaAs has been investigated by deep level transient spectroscopy and capacitance versus voltage measurements. Following exposure to a hydrogen plasma for 30 min at 250 °C, the shallow level and DX center activity are reduced by an order of magnitude throughout a 1.6-μm-thick layer of molecular beam epitaxially grown AlGaAs. Isochronal annealing studies showed that both the shallow donor and DX center electrical activity recover together at about 400 °C. The shallow donor recovery mimics the behavior of donors in GaAs and has an activation energy of 2.0 eV. The DX center recovery shows a distribution of activation energies centered at 2.1 eV with a full width at half-maximum of 0.25 eV. The hydrogen passivation chemistry of DX centers and shallow donors support models in which isolated Si impurities give rise to both DX behavior and shallow levels.


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