Molecular beam epitaxial growth and optical properties of InAs1-xSbx in 8–12 μm wavelength range

Yen, M. Y.; Levine, B. F.; Bethea, C. G.; Choi, K. K.; Cho, A. Y.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p927
Academic Journal
We have successfully grown InAs1-xSbx by molecular beam epitaxy over the complete compositional range of 0


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