High-mobility two-dimensional electron gas structure for modulation-doped GaAs transistors

Christou, A.; Varmazis, K.; Hatzopoulos, Z.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p935
Academic Journal
Utilizing two spacer regions of AlxGa1-xAs (x=0.41) and an intervening superlattice region of ten periods of GaAs/AlGaAs, 100 Å per period, an optimization of the electron mobility and concentration was obtained. An electron mobility of 131 000 cm2/V s was obtained at 77 K with an electron sheet concentration of 1.2×1012 cm-2.


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