Arsenic-doped p-CdTe layers grown by organometallic vapor phase epitaxy

Ghandhi, S. K.; Taskar, N. R.; Bhat, I. B.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p900
Academic Journal
Arsenic-doped CdTe layers have been grown by organometallic vapor phase epitaxy in an atmospheric pressure reactor using arsine as the dopant gas. Doping levels above 2×1017 cm-3 have been reproducibly obtained for the first time in an epitaxial growth system, with a doping uniformity of ±20% over 1.5×1.5 cm. This is a much higher level of doping than usually possible in bulk growth systems. The layers were characterized by photoluminescence measurements at 12 K and by Hall measurements as a function of temperature. The ionization energy of the As acceptor was found to be about 62±4 meV from transport measurements. It was also shown that the electronic activity of the As incorporated is a function of the dimethylcadmium to diethyltelluride partial pressure ratio in the gas phase.


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